The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Apr. 10, 2006
Hag-ju Cho, Seoul, KR;
Taek-soo Jeon, Yongin-si, KR;
Hye-lan Lee, Hwaseong-si, KR;
Sang-bom Kang, Seoul, KR;
Yu-gyun Shin, Seongnam-si, KR;
Hag-Ju Cho, Seoul, KR;
Taek-Soo Jeon, Yongin-si, KR;
Hye-Lan Lee, Hwaseong-si, KR;
Sang-Bom Kang, Seoul, KR;
Yu-Gyun Shin, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device comprising a semiconductor substrate having a first impurity region and a second impurity region, a first gate pattern formed on the first impurity region, and a second gate pattern formed on the second impurity region is disclosed. The first gate pattern comprises a first gate insulation layer pattern, a metal layer pattern having a first thickness, and a first polysilicon layer pattern. The second gate pattern comprises a second gate insulation layer pattern, a metal silicide layer pattern having a second thickness smaller than the first thickness, and a second polysilicon layer pattern. The metal silicide layer pattern is formed from a material substantially the same as the material from which the metal layer pattern is formed. A method for manufacturing the semiconductor device is also disclosed.