The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Jan. 03, 2007
Applicants:
Brian R. Butcher, Queen Creek, AZ (US);
Kerry J. Nagel, Phoenix, AZ (US);
Kenneth H. Smith, Chandler, AZ (US);
Inventors:
Brian R. Butcher, Queen Creek, AZ (US);
Kerry J. Nagel, Phoenix, AZ (US);
Kenneth H. Smith, Chandler, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/461 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
Abstract
According to an example embodiment, a semiconductor device includes a lower electrode () disposed on an oxide layer (), an upper electrode () disposed on the lower electrode, a dielectric pattern () disposed on the oxide layer and surrounding the upper electrode, the upper electrode protruding above an upper surface of the dielectric pattern, and a contact pattern () that is contiguous with the upper electrode and the dielectric pattern.