The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Feb. 03, 2006
Andrew Lam, San Francisco, CA (US);
Yihwan Kim, Milpitas, CA (US);
Satheesh Kuppurao, San Jose, CA (US);
See-eng Phan, San Jose, CA (US);
Xinliang LU, Sunnyvale, CA (US);
Chien-teh Kao, Sunnyvale, CA (US);
Andrew Lam, San Francisco, CA (US);
Yihwan Kim, Milpitas, CA (US);
Satheesh Kuppurao, San Jose, CA (US);
See-Eng Phan, San Jose, CA (US);
Xinliang Lu, Sunnyvale, CA (US);
Chien-Teh Kao, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.