The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2009

Filed:

Jun. 12, 2007
Applicants:

James A. Bruce, Williston, VT (US);

Orest Bula, Shelburne, VT (US);

Edward W. Conrad, Jeffersonville, VT (US);

William C. Leipold, Enosburg Falls, VT (US);

Michael S. Hibbs, Westford, VT (US);

Joshua J. Krueger, Burlington, VT (US);

Inventors:

James A. Bruce, Williston, VT (US);

Orest Bula, Shelburne, VT (US);

Edward W. Conrad, Jeffersonville, VT (US);

William C. Leipold, Enosburg Falls, VT (US);

Michael S. Hibbs, Westford, VT (US);

Joshua J. Krueger, Burlington, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.


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