The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Jul. 22, 2004
Stephen Richard Fox, Hopewell Junction, NY (US);
Neena Garg, Fishkill, NY (US);
Kenneth John Giewont, Hopewell Junction, NY (US);
Junedong Lee, Hopewell Junction, NY (US);
Siegfried Lutz Maurer, Stormville, NY (US);
Dan Moy, Bethel, CT (US);
Maurice Heathcote Norcott, San Jose, CA (US);
Devendra Kumar Sadana, Pleasantville, NY (US);
Stephen Richard Fox, Hopewell Junction, NY (US);
Neena Garg, Fishkill, NY (US);
Kenneth John Giewont, Hopewell Junction, NY (US);
Junedong Lee, Hopewell Junction, NY (US);
Siegfried Lutz Maurer, Stormville, NY (US);
Dan Moy, Bethel, CT (US);
Maurice Heathcote Norcott, San Jose, CA (US);
Devendra Kumar Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a semiconductor-on-insulator (SOI) substrate is described incorporating the steps of heating a substrate, implanting oxygen into a heated substrate, cooling the substrate, implanting into a cooled substrate and annealing. The steps of implanting may be at several energies to provide a plurality of depths and corresponding buried damaged regions. Prior to implanting, the step of cleaning the substrate surface and/or forming a patterned mask thereon may be performed. The invention overcomes the problem of raising the quality of buried oxide and its properties such as surface roughness, uniform thickness and breakdown voltage V.