The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Jun. 28, 2004
Peter G. Tolchinsky, Beaverton, OR (US);
Mark Bohr, Aloha, OR (US);
Irwin Yablok, Portland, OR (US);
Peter G. Tolchinsky, Beaverton, OR (US);
Mark Bohr, Aloha, OR (US);
Irwin Yablok, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A semiconductor transistor structure with increased mobility in the channel zone and a method of its fabrication are described. A semiconductor substrate having a first dopant is formed. A diffusion barrier layer having a second dopant is formed on the semiconductor substrate to suppress outdiffusion of the first dopant. Next, a semiconductor layer having substantially low dopant concentration relative to the first layer is epitaxially grown on the diffusion barrier layer. The semiconductor layer defines a channel in the semiconductor transistor structure. The low dopant concentration in the semiconductor layer increases the mobility of the carriers in the channel of the semiconductor transistor structure. A gate electrode and a gate dielectric are formed on the semiconductor layer with the low dopant concentration.