The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Jan. 10, 2007
Yoko Yamaguchi Adams, Fremont, CA (US);
Gowri Kota, Fremont, CA (US);
Frank Y. Lin, Fremont, CA (US);
Qinghua Zhong, Fremont, CA (US);
Yoko Yamaguchi Adams, Fremont, CA (US);
Gowri Kota, Fremont, CA (US);
Frank Y. Lin, Fremont, CA (US);
Qinghua Zhong, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching features in an etch layer is provided. A patterned photoresist mask is provided over the etch layer, the photoresist mask having at least one photoresist line having a pair of sidewalls ending at a line end is provided. A polymer layer is placed over the at least one photoresist line, wherein a thickness of the polymer layer at the line end of the photoresist line is greater than a thickness of the polymer layer on the sidewalls of the photoresist line. Features are etched into the etch layer through the photoresist mask, wherein a line end shortening (LES) ratio is less than or equal to 1.