The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
May. 25, 2006
Yuji Harada, Joetsu, JP;
Jun Hatakeyama, Joetsu, JP;
Yoshio Kawai, Joetsu, JP;
Masaru Sasago, Osaka, JP;
Masayuki Endo, Osaka, JP;
Kazuhiko Maeda, Tokyo, JP;
Haruhiko Komoriya, Kawagoe, JP;
Michitaka Ootani, Kawagoe, JP;
Yuji Harada, Joetsu, JP;
Jun Hatakeyama, Joetsu, JP;
Yoshio Kawai, Joetsu, JP;
Masaru Sasago, Osaka, JP;
Masayuki Endo, Osaka, JP;
Kazuhiko Maeda, Tokyo, JP;
Haruhiko Komoriya, Kawagoe, JP;
Michitaka Ootani, Kawagoe, JP;
Panasonic Corporation, Osaka, JP;
Central Glass Co., Ltd., Yamaguchi, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
A polymer comprising recurring units of formula (1) wherein Ris F or fluoroalkyl, Ris alkylene or fluoroalkylene, and Ris an acid labile group and having a Mw of 1,000-500,000 is used to formulate a resist composition, which is processed by the lithography involving ArF exposure and offers many advantages including resolution, minimal line edge roughness, etch resistance, and minimal surface roughness after etching. The composition performs well when processed by the ArF immersion lithography with liquid interposed between the projection lens and the wafer.