The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Feb. 09, 2004
Trung T. Doan, Boise, ID (US);
Randhir P. S. Thakur, Boise, ID (US);
Yauh-ching Liu, Boise, ID (US);
Trung T. Doan, Boise, ID (US);
Randhir P. S. Thakur, Boise, ID (US);
Yauh-Ching Liu, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method is disclosed for reducing the effects of buckling, also referred to as cracking or wrinkling in multilayer heterostructures. The present method involves forming a planarization layer superjacent a semiconductor substrate. A barrier film having a structural integrity is formed superjacent the planarization layer. A second layer is formed superjacent the barrier film. The substrate is heated sufficiently to cause the planarization layer to expand according to a first thermal coefficient of expansion, the second layer to expand according to a second thermal coefficient of expansion, and the structural integrity of the barrier film to be maintained. This results in the barrier film isolating the planarization layer from the second layer, thereby preventing the planarization layer and the second layer from interacting during the heating step.