The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Jul. 25, 2006
Feng-chi Hung, Zhubei, TW;
Jian-hsing Lee, Hsinchu, TW;
Hung-lin Chen, Pingtung, TW;
Deng-shun Chang, Kaohsiung, TW;
Feng-Chi Hung, Zhubei, TW;
Jian-Hsing Lee, Hsinchu, TW;
Hung-Lin Chen, Pingtung, TW;
Deng-Shun Chang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An electrostatic discharge protection device comprising a multi-finger gate, a first lightly doped region of a second conductivity, a first heavily doped region of the second conductivity, and a second lightly doped region of the second conductivity. The multi-finger gate comprises a plurality of fingers mutually connected in parallel over an active region of a first conductivity. The first lightly doped region of a second conductivity is disposed in the semiconductor substrate and between two of the fingers. The first heavily doped region of the second conductivity is disposed in the first lightly doped region of the second conductivity. The second lightly doped region of the second conductivity is beneath and adjoins the first lightly doped region of the second conductivity.