The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2009

Filed:

Mar. 07, 2005
Applicants:

Satoru Shimura, Nirasaki, JP;

Tetsu Kawasaki, Nirasaki, JP;

Inventors:

Satoru Shimura, Nirasaki, JP;

Tetsu Kawasaki, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to the present invention, a connection hole is formed above a substrate by an etching treatment using a first resist film as a mask, and after the first resist film is removed by stripping, the substrate is exposed to a water vapor atmosphere. Thus, an amine component in the film is removed before formation of a second resist film for forming a wiring groove, thereby preventing contamination of the second resist film. The present invention is a method for forming wiring of a semiconductor device using a dual damascene method, in which the resist film for forming the wiring groove can be prevented from being contaminated with the amine component or the like.


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