The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Mar. 18, 2005
Jeong Soo Byun, Cupertino, CA (US);
Jianxin Lei, Santa Clara, CA (US);
Lisa Yang, Saratoga, CA (US);
Hien-minh Huu Le, San Jose, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Jianxin Lei, Santa Clara, CA (US);
Lisa Yang, Saratoga, CA (US);
Hien-Minh Huu Le, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A metal silicide layer is formed on silicon-containing features of a substrate in a chamber. A metal film is sputter deposited on the substrate and a portion of the sputter deposited metal film is silicided. In the process, sputtering gas is energized by applying an electrical bias potential across the metal sputtering target and the substrate support to sputter deposit metal from a target onto the substrate. At least a portion of the deposited sputtered metal is silicided by heating the substrate to a silicidation temperature exceeding about 200° C. to form a combined sputtered metal and metal silicide layer on the substrate. The remaining sputtered metal can be silicided by maintaining the substrate at the silicidation temperature to form the metal silicide layer.