The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2009

Filed:

Apr. 23, 2003
Applicants:

Matthew E Colburn, Hopewell Junction, NY (US);

Stephen M Gates, Ossining, NY (US);

Jeffrey C Hedrick, Montvale, NJ (US);

Elbert Huang, Tarrytown, NY (US);

Satyanarayana V Nitta, Poughquag, NY (US);

Sampath Purushothaman, Yorktown Heights, NY (US);

Muthumanickam Sankarapandian, Yorktown Heights, NY (US);

Inventors:

Matthew E Colburn, Hopewell Junction, NY (US);

Stephen M Gates, Ossining, NY (US);

Jeffrey C Hedrick, Montvale, NJ (US);

Elbert Huang, Tarrytown, NY (US);

Satyanarayana V Nitta, Poughquag, NY (US);

Sampath Purushothaman, Yorktown Heights, NY (US);

Muthumanickam Sankarapandian, Yorktown Heights, NY (US);

Attorneys:
Int. Cl.
CPC ...
B05D 1/32 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The masking material may comprise a polymer containing a reactive grafting site that selectively binds to the portions of the pattern. The masking material may include a polymer that binds to the portions of the pattern to provide a layer of functional groups suitable for polymerization initiation, a reactive molecule having functional groups suitable for polymerization propagation, or a reactive molecule, wherein reaction of the reactive molecule with the portion of the pattern generates a layer having reactive groups, which participate in step growth polymerization. Structures in accordance with the method. Compositions for practicing the method.


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