The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Apr. 20, 2005
Applicants:
Jianjun Cao, Torrance, CA (US);
Timothy D. Henson, Torrance, CA (US);
Naresh Thapar, Redondo Beach, CA (US);
Paul Harvey, Chepstow, GB;
David Kent, South Wales, GB;
Inventors:
Jianjun Cao, Torrance, CA (US);
Timothy D. Henson, Torrance, CA (US);
Naresh Thapar, Redondo Beach, CA (US);
Paul Harvey, Chepstow, GB;
David Kent, South Wales, GB;
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A power semiconductor device which includes a source field electrode, and at least one insulated gate electrode adjacent a respective side of the source field electrode, the source field electrode and the gate electrode being disposed in a common trench, and a method for fabricating the device.