The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Nov. 21, 2006
Tzyh-cheang Lee, Hsinchu, TW;
Fu-liang Yang, Hsin-Chu, TW;
Jiunn-ren Hwang, Hsin-Chu, TW;
Tsung-lin Lee, Hsinchu, TW;
Tzyh-Cheang Lee, Hsinchu, TW;
Fu-Liang Yang, Hsin-Chu, TW;
Jiunn-Ren Hwang, Hsin-Chu, TW;
Tsung-Lin Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A gate stack is formed on a substrate. The gate stack has a sidewall. An oxide-nitride-oxide material is deposited on the gate stack. Portions of the oxide-nitride-oxide material are removed to form an oxide-nitride-oxide structure. The oxide-nitride-oxide structure has a generally L-shaped cross-section with a vertical portion along at least part of the gate stack sidewall and a horizontal portion along the substrate. A top oxide material is deposited over the substrate. A silicon nitride spacer material is deposited over the top oxide material. Portions of the top oxide material and the silicon nitride spacer material are removed to form a silicon nitride spacer separated from the oxide-nitride-oxide stack by the top oxide material. Source/drain regions are formed in the substrate.