The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Dec. 15, 2005
Guang-yaw Hwang, Hsin-Shi, TW;
Thomas Nguyen, Fremont, CA (US);
Wen-ben Chou, Fremont, CA (US);
Timothy Tran, Fremont, CA (US);
Yu-wei Yang, Hsin-Shi, TW;
Guang-Yaw Hwang, Hsin-Shi, TW;
Thomas Nguyen, Fremont, CA (US);
Wen-Ben Chou, Fremont, CA (US);
Timothy Tran, Fremont, CA (US);
Yu-Wei Yang, Hsin-Shi, TW;
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching a barrier material on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system, wherein the substrate includes the barrier material and a low-k material, and wherein the barrier material and a low-k material are configured to be exposed to a plasma. The method also includes flowing an etchant gas mixture, including CHF from about 4% to about 8% of a plasma gas flow, into the plasma processing chamber, wherein the etchant gas mixture is configured to etch the barrier material at a first etch rate, the etchant gas mixture is configured to etch the low-k material at a second etch rate, wherein the first etch rate is substantially greater than the second etch rate. The method further includes striking a plasma from the etchant source gas; and etching the barrier layer and the low-k layer.