The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Aug. 19, 2003
Toru Otsuka, Nishishirakawa-gun, JP;
Toru Otsuka, Nishishirakawa-gun, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A silicon epitaxial wafer manufacturing method, in which a vapor phase growth of a silicon epitaxial layer is performed on a front surface of a silicon single crystal substrate (W) arranged in the reaction chamber (). A silicon deposit deposited in the reaction chamber () is removed by etching an inside of the reaction chamber () with a hydrogen chloride gas in a state that a silicon crystal substrate (W) is not introduced, and thereafter, a primary cooling is performed in the reaction chamber (). Subsequently, a secondary cooling is performed after heating an inside of the reaction chamber (), and thereafter, the vapor phase growth is performed to manufacture a silicon epitaxial wafer.