The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Jul. 05, 2007
Fréderic Allibert, Grenoble, FR;
Takeshi Akatsu, Saint Nazaire les Eymes, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
Fréderic Allibert, Grenoble, FR;
Takeshi Akatsu, Saint Nazaire les Eymes, FR;
Bruno Ghyselen, Seyssinet-Pariset, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The invention concerns a field-effect transistor with a drain, a source, a channel in electrical contact with the source and the drain, and at least one gate, so as to apply an electric field to the channel when each gate is polarized, where the channel has a multi-layer structure with at least three layers, and with at least one of the layers of the multi-layer structure having electrical properties that are substantially different from those of another layer of the multi-layer structure, and wherein a single gate or two gates are arranged substantially perpendicular to a reference plane of the channel defined by an interface plane between two layers of the multi-layer structure.