The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2009

Filed:

Jul. 01, 2004
Applicants:

Richard H. Lane, Boise, ID (US);

Fred Fishburn, Boise, ID (US);

Inventors:

Richard H. Lane, Boise, ID (US);

Fred Fishburn, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for forming accurate, symmetric cross-section spacers of hardmask material on a substrate such as a silicon wafer or quartz substrate, for formation of precise subresolution features useful for forming integrated circuits. The resulting symmetrical hardmask spacers with their symmetric upper portions may be used to accurately etch well-defined, high aspect ratio features in the underlying substrate. Some disclosed methods also enable simultaneous formation of hardmask structures of various dimensions, of both conventional and subresolution size, to enable etching structural features of different sizes in the underlying substrate.


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