The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Feb. 16, 2007
Shunpei Yamazaki, Setagaya, JP;
Hisashi Ohtani, Atsugi, JP;
Koichiro Tanaka, Atsugi, JP;
Kenji Kasahara, Atsugi, JP;
Ritsuko Kawasaki, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Hisashi Ohtani, Atsugi, JP;
Koichiro Tanaka, Atsugi, JP;
Kenji Kasahara, Atsugi, JP;
Ritsuko Kawasaki, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.