The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2009

Filed:

Dec. 01, 2005
Applicants:

Stephen M. Cea, Hillsboro, OR (US);

Ravindra Soman, Portland, OR (US);

Ramune Nagisetty, Portland, OR (US);

Sunit Tyagi, Portland, OR (US);

Sanjay Natarajan, Portland, OR (US);

Inventors:

Stephen M. Cea, Hillsboro, OR (US);

Ravindra Soman, Portland, OR (US);

Ramune Nagisetty, Portland, OR (US);

Sunit Tyagi, Portland, OR (US);

Sanjay Natarajan, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.


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