The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Dec. 02, 2005
Applicants:
Maud Vinet, Grenoble, FR;
Jean-charles Barbe, Grenoble, FR;
Bernard Previtali, Grenoble, FR;
Thierry Poiroux, Voreppe, FR;
Inventors:
Maud Vinet, Grenoble, FR;
Jean-Charles Barbe, Grenoble, FR;
Bernard Previtali, Grenoble, FR;
Thierry Poiroux, Voreppe, FR;
Assignee:
Commissariat A l'Energie Atomique, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for insulating patterns formed in a thin film made of a first oxidizable semi-conducting material, with a thickness less than or equal to 20 nm and preferably less than or equal to 10 nm, successively comprises: The first and second semi-conducting materials can be identical and the step of selective formation of the additional layer can be performed by selective epitaxial growth of the free zones of the thin film.