The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Jun. 02, 2006
Kong-beng Thei, Hsin-Chu, TW;
Chun-lung Cheng, Taipei County, TW;
Hsi-chien Lin, Hsin-Chu, TW;
Li-don Chen, Hsin-Chu, TW;
Tung-lung Lai, Hsin-Chu, TW;
Chi-lung Lin, Hsin-Chu, TW;
Kong-Beng Thei, Hsin-Chu, TW;
Chun-Lung Cheng, Taipei County, TW;
Hsi-Chien Lin, Hsin-Chu, TW;
Li-Don Chen, Hsin-Chu, TW;
Tung-Lung Lai, Hsin-Chu, TW;
Chi-Lung Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A barrier layer stack. The barrier layer stack includes a semiconductor process wafer comprising an exposed conductive region, a first barrier layer stack comprising at least one TiN and one Ti layers overlying and contacting the conductive region, wherein the TiN layer is contacted with the Ti layer, and an overlying aluminum alloy layer in contact with the first barrier layer stack.