The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Apr. 14, 2006
Sandeep Nijhawan, Los Altos, CA (US);
David Eaglesham, Livermore, CA (US);
Lori Washington, Union City, CA (US);
David Bour, Cupertino, CA (US);
Jacob Smith, Santa Clara, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
David Eaglesham, Livermore, CA (US);
Lori Washington, Union City, CA (US);
David Bour, Cupertino, CA (US);
Jacob Smith, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided of fabricating a nitride semiconductor structure. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over one side of the substrate with a thermal chemical-vapor-deposition process. A second layer is similarly deposited over an opposite side of the substrate using the group-III precursor and the nitrogen precursor. The substrate is cooled after depositing the first and second layers without substantially deforming a shape of the substrate.