The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Oct. 11, 2007
Wilfried Von Ammon, Hochburg/Ach, AT;
Katsuhiko Nakai, Hikari Yamaguchi, JP;
Martin Weber, Kastl, DE;
Herbert Schmidt, Halsbach, DE;
Atsushi Ikari, Yamaguchi, JP;
Wilfried von Ammon, Hochburg/Ach, AT;
Katsuhiko Nakai, Hikari Yamaguchi, JP;
Martin Weber, Kastl, DE;
Herbert Schmidt, Halsbach, DE;
Atsushi Ikari, Yamaguchi, JP;
Siltronic AG, Munich, DE;
Abstract
The Czochralski method is used for producing p-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p-doped semiconductor wafers which are epitaxially coated.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile