The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Jul. 09, 2004
Jozef Maria Finders, Veldhoven, NL;
Mircea Dusa, Campbell, CA (US);
Richard Johannes Franciscus Van Haren, Waalre, NL;
Luis Alberto Colina Santamaria Colina, Veldhoven, NL;
Eric Henri Jan Hendrickx, Linden, BE;
Geert Vandenberghe, Wijgmaal, BE;
Alexander Hendrikus Martinus Van Der Hoff, Valkenswaard, NL;
Jozef Maria Finders, Veldhoven, NL;
Mircea Dusa, Campbell, CA (US);
Richard Johannes Franciscus Van Haren, Waalre, NL;
Luis Alberto Colina Santamaria Colina, Veldhoven, NL;
Eric Henri Jan Hendrickx, Linden, BE;
Geert Vandenberghe, Wijgmaal, BE;
Alexander Hendrikus Martinus Van Der Hoff, Valkenswaard, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.