The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2008

Filed:

Jul. 24, 2006
Applicants:

Ravindar M. Lall, Portland, OR (US);

Moshe Agam, Portland, OR (US);

Kazi Habib, Portland, OR (US);

Inventors:

Ravindar M. Lall, Portland, OR (US);

Moshe Agam, Portland, OR (US);

Kazi Habib, Portland, OR (US);

Assignee:

Lattice Semiconductor Corporation, Hillsboro, OR (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one embodiment, a (negative-voltage) charge pump with one or more stages that receives a (high) input voltage and generates a higher-magnitude (negative) output voltage. Each stage has two capacitors for storing charges and two branches that alternate to transmit a higher-magnitude output voltage at every clock half cycle. Each branch has a PMOS transistor and a NMOS transistor. To reduce the effects of back body from the substrate, two transistors are constructed with three wells and two with four wells, where the number of wells per device is dependent upon the substrate type used.


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