The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2008

Filed:

Oct. 26, 2005
Applicants:

Simon S. Chan, Saratoga, CA (US);

Weidong Qian, Sunnyvale, CA (US);

Scott Bell, San Jose, CA (US);

Phillip Jones, Fremont, CA (US);

Allison Holbrook, San Jose, CA (US);

Inventors:

Simon S. Chan, Saratoga, CA (US);

Weidong Qian, Sunnyvale, CA (US);

Scott Bell, San Jose, CA (US);

Phillip Jones, Fremont, CA (US);

Allison Holbrook, San Jose, CA (US);

Assignees:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure for electrically isolating semiconductor devices includes a semiconducting layer and a layer of aluminum oxide formed in a pattern over the semiconducting layer, where the pattern exposes a portion of the semiconducting layer. The structure further includes an electrical isolation region formed in the exposed portion of the semiconducting layer, where the isolation region does not substantially encroach a region beneath the layer of aluminum oxide.


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