The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
May. 04, 2005
Yung-chang Lin, Taichung Hsien, TW;
Chia-wen Liang, Hsinchu, TW;
Chuan-fu Wang, Jhunan Township, Miaoli County, TW;
Yung-Chang Lin, Taichung Hsien, TW;
Chia-Wen Liang, Hsinchu, TW;
Chuan-Fu Wang, Jhunan Township, Miaoli County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A DRAM cell and a method for fabricating the same are provided. The method includes: forming a trench in a substrate; forming a first capacitor dielectric layer on the surface of the trench; forming a conducting layer inside the trench; forming a second capacitor dielectric layer on the surface of the substrate and on the conducting layer, wherein the substrate around the first and second capacitor dielectric layers serves as a bottom electrode; forming a protruding electrode on the substrate, the protruding electrode being on the substrate around the trench and covering a junction between the trench and the substrate; and electrically connecting the protruding electrode and the conducting layer, the conducting layer and the protruding electrode being an upper electrode.