The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Jul. 30, 2002
Lothar Bauch, Dresden, DE;
Gerhard Kunkel, Radebeul, DE;
Hermann Sachse, Dresden, DE;
Helmut Wurzer, Dresden, DE;
Lothar Bauch, Dresden, DE;
Gerhard Kunkel, Radebeul, DE;
Hermann Sachse, Dresden, DE;
Helmut Wurzer, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A photolithographic mask having half tone main features and perpendicular half tone assist features. One embodiment provides for the exposure of radiation-sensitive resist layers on semiconductor substrates. The mask has at least one radiation-transmissive substrate and at least one half-tone layer. The half-tone layer is used to provide main features, the main features being formed in such a way that the pattern formed by the main features is transferred into the resist layer when irradiated, and the half-tone layer is also used to provide assist features, the assist features being formed substantially perpendicular to the main features in such a way that the pattern formed by the assist features is not transferred into the resist layer when irradiated.