The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Sep. 30, 2005
Shengwu Chang, South Hamilton, MA (US);
Isao Tsunoda, Kanagawa-ken, JP;
Nobihiro Tokoro, West Newbury, MA (US);
Dennis Rodier, Francestown, NH (US);
Joseph C. Olson, Beverly, MA (US);
Donna Smatlak, Belmont, MA (US);
Damian Brennan, Gloucester, MA (US);
William Bintz, Londonderry, NH (US);
Shengwu Chang, South Hamilton, MA (US);
Isao Tsunoda, Kanagawa-ken, JP;
Nobihiro Tokoro, West Newbury, MA (US);
Dennis Rodier, Francestown, NH (US);
Joseph C. Olson, Beverly, MA (US);
Donna Smatlak, Belmont, MA (US);
Damian Brennan, Gloucester, MA (US);
William Bintz, Londonderry, NH (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.