The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2008

Filed:

May. 18, 2006
Applicants:

Yong-chai Kwon, Suwon, KR;

Kang-wook Lee, Suwon, KR;

Keum-hee MA, Andong, KR;

Seong-ii Han, Suwon, KR;

Inventors:

Yong-Chai Kwon, Suwon, KR;

Kang-Wook Lee, Suwon, KR;

Keum-Hee Ma, Andong, KR;

Seong-II Han, Suwon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a stacked chip configuration, and manufacturing methods thereof, the gap between a lower and an upper chip is filled completely using a relatively simple process that eliminates voids between the lower and upper chips and the cracking and delamination problems associated with such voids. The present invention is applicable to both chip-level bonding and wafer-level bonding approaches. A photosensitive polymer layer is applied to a first chip, or wafer, prior to stacking the chips or stacking the wafers. The photosensitive polymer layer is partially cured, so that the photosensitive polymer layer is made to be structurally stable, while retaining its adhesive properties. The second chip, or wafer, is stacked, aligned, and bonded to the first chip, or wafer, and the photosensitive polymer layer is then cured to fully bond the first and second chips, or wafers. In this manner, adhesion between chips/wafers is greatly improved, while providing complete gap fill. In addition, mechanical reliability is improved, alleviating the problems associated with cracking and delamination, and leading to an improvement in device yield and device reliability.


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