The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Apr. 18, 2006
Lihua LI, San Jose, CA (US);
Tzu-fang Huang, San Jose, CA (US);
Jerry Sugiarto, Legal Representative, Sunnyvale, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Peter Wai-man Lee, San Jose, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Zhenjiang Cui, San Jose, CA (US);
Sohyun Park, Santa Clara, CA (US);
Lihua Li, San Jose, CA (US);
Tzu-Fang Huang, San Jose, CA (US);
Jerry Sugiarto, legal representative, Sunnyvale, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Peter Wai-Man Lee, San Jose, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Zhenjiang Cui, San Jose, CA (US);
Sohyun Park, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.