The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2008
Filed:
Jun. 30, 2004
Alan Myers, Menlo Park, CA (US);
Juan Santiago, Fremont, CA (US);
Shuhuai Yao, Stanford, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A pumping medium for an electro-osmotic pump made of porous silicon. The porous silicon may result in a lower required pumping voltage and a smaller form factor for an equivalent flow rate and pressure generation as compared to conventional glass frits. The porous silicon may also provide a better thermodynamic efficiency over conventional glass frits for use in electro-osmotic pumps. The increased efficiency of the porous silicon may provide an low-power, high flow rate, high pressure, small form factor, vibration-free pump for cooling microelectronic devices, such as integrated circuit chips.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile