The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Dec. 17, 2002
Kevin Elliot Cooper, La Terrasse, FR;
Jennifer Lynn Cooper, La Terrasse, FR;
Janos Farkas, Saint Ismier, FR;
John C. Flake, Montbonnot, FR;
Johannes Friedrich Groschopf, Hopewell Junction, NY (US);
Yuri Solomentsev, Allen, TX (US);
Kevin Elliot Cooper, La Terrasse, FR;
Jennifer Lynn Cooper, La Terrasse, FR;
Janos Farkas, Saint Ismier, FR;
John C. Flake, Montbonnot, FR;
Johannes Friedrich Groschopf, Hopewell Junction, NY (US);
Yuri Solomentsev, Allen, TX (US);
AMD, Inc., Sunnyvale, CA (US);
Motorola, Inc., Schaumberg, IL (US);
Abstract
This disclosure describes a low particle concentration formulation for slurry which is particularly useful in continuous CMP polishing of copper layers during semiconductor wafer manufacture. The slurry is characterized by particle concentrations generally less than 2 wt %, and advantageously less than 1 wt %. In particular embodiments, where the particle concentration is in a range of 50 to 450 PPM, an 8-fold increase in polishing rate over reactive liquid slurries has been realized. Slurries thus formulated also achieve a reduction in defectivity and in the variations in planarity from wafer to wafer during manufacture, by improving the stability of polishing quality. The slurry formulations permit substantial cost savings over traditional 2-component, reactive liquid and fixed/bonded abrasive slurries. In addition the formulations provides an advantageous way during CMP to easily change the selectivity or rate of removal of one film material vs. another. Yet another use is to provide slurry 'pulsing' as a means to activate bonded abrasive or fixed abrasive slurry technology.