The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2008
Filed:
Sep. 11, 2006
Takashi Yamauchi, Yokohama, JP;
Atsuhiro Kinoshita, Kamakura, JP;
Yoshinori Tsuchiya, Yokohama, JP;
Junji Koga, Yokosuka, JP;
Koichi Kato, Yokohama, JP;
Nobutoshi Aoki, Yokohama, JP;
Kazuya Ohuchi, Yokohama, JP;
Takashi Yamauchi, Yokohama, JP;
Atsuhiro Kinoshita, Kamakura, JP;
Yoshinori Tsuchiya, Yokohama, JP;
Junji Koga, Yokosuka, JP;
Koichi Kato, Yokohama, JP;
Nobutoshi Aoki, Yokohama, JP;
Kazuya Ohuchi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
It is made possible to reduce the interface resistance at the interface between the nickel silicide film and the silicon. A semiconductor manufacturing method includes: forming an impurity region on a silicon substrate, with impurities being introduced into the impurity region; depositing a Ni layer so as to cover the impurity region; changing the surface of the impurity region into a NiSilayer through annealing; forming a Ni layer on the NiSilayer; and silicidating the NiSilayer through annealing.