The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2008

Filed:

Oct. 09, 2007
Applicants:

Shifang LI, Pleasanton, CA (US);

Junwei Bao, Fremont, CA (US);

Inventors:

Shifang Li, Pleasanton, CA (US);

Junwei Bao, Fremont, CA (US);

Assignee:

Timbre Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/14 (2006.01); G01B 11/24 (2006.01); G01B 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure formed on a semiconductor wafer is examined by obtaining a first diffraction signal measured from the structure using an optical metrology device. A first profile is obtained from a first machine learning system using the first diffraction signal obtained as an input to the first machine learning system. The first machine learning system is configured to generate a profile as an output for a diffraction signal received as an input. A second profile is obtained from a second machine learning system using the first profile obtained from the first machine learning system as an input to the second machine learning system. The second machine learning system is configured to generate a diffraction signal as an output for a profile received as an input. The first and second profiles include one or more parameters that characterize one or more features of the structure.


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