The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2008

Filed:

Oct. 30, 2006
Applicants:

Doo-youl Lee, Seongnam-si, KR;

Han-ku Cho, Seongnam-si, KR;

Suk-joo Lee, Yongin-si, KR;

Gi-sung Yeo, Seoul, KR;

Cha-won Koh, Yongin-si, KR;

Sung-gon Jung, Seoul, KR;

Inventors:

Doo-Youl Lee, Seongnam-si, KR;

Han-Ku Cho, Seongnam-si, KR;

Suk-Joo Lee, Yongin-si, KR;

Gi-Sung Yeo, Seoul, KR;

Cha-Won Koh, Yongin-si, KR;

Sung-Gon Jung, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In the method of forming a mask structure, a first mask is formed on a substrate where the first mask includes a first mask pattern having a plurality of mask pattern portions having openings therebetween and a second mask pattern having a corner portion of which an inner side wall that is curved. A sacrificial layer is formed on the first mask. A hard mask layer is formed on the sacrificial layer. After the hard mask layer is partially removed until the sacrificial layer adjacent to the corner portion is exposed, a second mask is formed from the hard mask layer remaining in the space after removing the sacrificial layer. A minute pattern having a fine structure may be easily formed on the substrate.


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