The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Nov. 23, 2005
Taichiroo Konno, Tsuchiura, JP;
Kazuyuki Iizuka, Tsuchiura, JP;
Masahiro Arai, Ishioka, JP;
Takashi Furuya, Hitachi, JP;
Taichiroo Konno, Tsuchiura, JP;
Kazuyuki Iizuka, Tsuchiura, JP;
Masahiro Arai, Ishioka, JP;
Takashi Furuya, Hitachi, JP;
Hitachi Cable, Ltd., Tokyo, JP;
Abstract
A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.