The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Mar. 24, 2006
Paul Thorup, West Jordan, UT (US);
Ashok Challa, Sandy, UT (US);
Bruce Douglas Marchant, Murray, UT (US);
Paul Thorup, West Jordan, UT (US);
Ashok Challa, Sandy, UT (US);
Bruce Douglas Marchant, Murray, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A monolithically integrated trench FET and Schottky diode includes a pair of trenches terminating in a first silicon region of first conductivity type. Two body regions of a second conductivity type separated by a second silicon region of the first conductivity type are located between the pair of trenches. A source region of the first conductivity type is located over each body region. A contact opening extends between the pair of trenches to a depth below the source regions. An interconnect layer fills the contact opening so as to electrically contact the source regions and the second silicon region. Where the interconnect layer electrically contacts the second silicon region, a Schottky contact is formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile