The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2008

Filed:

Apr. 21, 2006
Applicants:

Steven Scheer, Austin, TX (US);

Alan Nolet, San Jose, CA (US);

Manuel Madriaga, San Jose, CA (US);

Inventors:

Steven Scheer, Austin, TX (US);

Alan Nolet, San Jose, CA (US);

Manuel Madriaga, San Jose, CA (US);

Assignee:

Timbre Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 19/00 (2006.01); G01B 11/14 (2006.01); G01R 31/26 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A patterned structure in a wafer is created using one or more fabrication treatment processes. The patterned structure has a treated and an untreated portion. One or more diffraction sensitivity enhancement techniques are applied to the structure, the one or more diffraction sensitivity enhancement techniques adjusting one or more properties of the patterned structure to enhance diffraction contrast between the treated portion and untreated portions. A first diffraction signal is measured off an unpatterned structure on the wafer using an optical metrology device. A second diffraction signal is measured off the patterned structure on the wafer using the optical metrology device. One or more diffraction sensitivity enhancement techniques are selected based on comparisons of the first and second diffraction signals.


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