The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Feb. 16, 2006
Masahito Mori, Tokorozawa, JP;
Toshiaki Nishida, Kudamatsu, JP;
Naoshi Itabashi, Hachioji, JP;
Motohiko Yoshigai, Hikari, JP;
Hideyuki Kazumi, Hitachinaka, JP;
Kazutami Tago, Hitachinaka, JP;
Masahito Mori, Tokorozawa, JP;
Toshiaki Nishida, Kudamatsu, JP;
Naoshi Itabashi, Hachioji, JP;
Motohiko Yoshigai, Hikari, JP;
Hideyuki Kazumi, Hitachinaka, JP;
Kazutami Tago, Hitachinaka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or 'high-k' insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.