The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Oct. 03, 2005
Gregg M Gallatin, Newtown, CT (US);
Emanuel Gofman, Haifa, IL;
Kafai Lai, Poughkeepsie, NY (US);
Mark a Lavin, Katonah, NY (US);
Maharaj Mukherjee, Wappingers Falls, NY (US);
Dov Ramm, D.N. Menashe, IL;
Alan E Rosenbluth, Yorktown Heights, NY (US);
Shlomo Shlafman, Haifa, IL;
Gregg M Gallatin, Newtown, CT (US);
Emanuel Gofman, Haifa, IL;
Kafai Lai, Poughkeepsie, NY (US);
Mark A Lavin, Katonah, NY (US);
Maharaj Mukherjee, Wappingers Falls, NY (US);
Dov Ramm, D.N. Menashe, IL;
Alan E Rosenbluth, Yorktown Heights, NY (US);
Shlomo Shlafman, Haifa, IL;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods, and program storage devices, for performing model-based optical lithography corrections by partitioning a cell array layout, having a plurality of polygons thereon, into a plurality of cells covering the layout. This layout is representative of a desired design data hierarchy. A density map is then generated corresponding to interactions between the polygons and plurality of cells, and then the densities within each cell are convolved. An interaction map is formed using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are then segregated respectively into differing ones of a plurality of buckets, whereby each of these buckets comprise a single set of identical groupings of truncated cells. A hierarchical arrangement is generated using these buckets, and the desired design data hierarchy enforced using the hierarchical arrangement to ultimately correct for optical lithography.