The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2008

Filed:

Jun. 09, 2004
Applicants:

Shibly S. Ahmed, San Jose, CA (US);

Judy Xilin an, San Jose, CA (US);

Srikanteswara Dakshina-murthy, Wappingers Falls, NY (US);

Cyrus E. Tabery, Santa Clara, CA (US);

Bin Yu, Cupertino, CA (US);

Inventors:

Shibly S. Ahmed, San Jose, CA (US);

Judy Xilin An, San Jose, CA (US);

Srikanteswara Dakshina-Murthy, Wappingers Falls, NY (US);

Cyrus E. Tabery, Santa Clara, CA (US);

Bin Yu, Cupertino, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device may include a substrate and an insulating layer formed on the substrate. A fin may be formed on the insulating layer. The fin may include a side surface and a top surface, and the side surface may have a <100> orientation. A first gate may be formed on the insulating layer proximate to the side surface of the fin.


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