The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Dec. 22, 2004
Hiroaki Ohkubo, Kanagawa, JP;
Ryota Yamamoto, Kanagawa, JP;
Masayuki Furumiya, Kanagawa, JP;
Masaharu Sato, Kanagawa, JP;
Kuniko Kikuta, Kanagawa, JP;
Makoto Nakayama, Kanagawa, JP;
Yasutaka Nakashiba, Kanagawa, JP;
Hiroaki Ohkubo, Kanagawa, JP;
Ryota Yamamoto, Kanagawa, JP;
Masayuki Furumiya, Kanagawa, JP;
Masaharu Sato, Kanagawa, JP;
Kuniko Kikuta, Kanagawa, JP;
Makoto Nakayama, Kanagawa, JP;
Yasutaka Nakashiba, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
On a silicon substrate, a first insulation layer, a lower conductive layer, a capacitor-insulator layer, and an upper conductive layer are formed in that order. Then, a first resist pattern is formed, the upper conductive layer is etched to form an upper electrode, and the capacitor-insulator layer is successively etched partway under the same etching condition as that of the upper conductive layer. Next, second resist pattern is formed, the remaining part of the capacitor-insulator layer is etched to form a second insulation layer, and the lower conductive layer is successively etched under the same etching condition as that of the capacitor-insulator layer so as to form a lower electrode and a lower wiring. In this manner, an MiM capacitor element constituted by the upper electrode, a part of the second insulation layer, and the lower electrode can be fabricated.