The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
May. 12, 2004
Steven C. Shannon, San Mateo, CA (US);
Alex Paterson, San Jose, CA (US);
Theodoros Panagopoulos, Santa Clara, CA (US);
John P. Holland, San Jose, CA (US);
Dennis Grimard, Ann Arbor, MI (US);
Yashushi Takakura, Chiba, JP;
Steven C. Shannon, San Mateo, CA (US);
Alex Paterson, San Jose, CA (US);
Theodoros Panagopoulos, Santa Clara, CA (US);
John P. Holland, San Jose, CA (US);
Dennis Grimard, Ann Arbor, MI (US);
Yashushi Takakura, Chiba, JP;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.