The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2008

Filed:

Sep. 03, 2004
Applicants:

Michael Weber-grabau, Sunnyvale, CA (US);

Christopher F. Bevis, Los Gatos, CA (US);

Michael Faeyrman, Qyriat Motzkin, IL;

Ofir Zamir, Haifa, IL;

Inventors:

Michael Weber-Grabau, Sunnyvale, CA (US);

Christopher F. Bevis, Los Gatos, CA (US);

Michael Faeyrman, Qyriat Motzkin, IL;

Ofir Zamir, Haifa, IL;

Assignee:

KLA-Tencor Technologies Corp., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 5/28 (2006.01); G01N 13/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system that includes an optical subsystem and an atomic force microscope probe is provided. The optical subsystem is configured to generate positional information about a location on a surface of the specimen. The system is configured to position the probe proximate the location based on the positional information. One method includes generating positional information about a location on a surface of a specimen with an optical subsystem. The method also includes positioning an atomic force microscopy probe proximate the location based on the positional information. Another system includes an optical subsystem configured to measure overlay of a wafer using scatterometry. The system also includes an atomic force microscope configured to measure a characteristic of a feature on the wafer. An additional method includes measuring overlay of a wafer using scatterometry. The method also includes measuring a characteristic of a feature on the wafer using atomic force microscopy.


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