The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2008
Filed:
Nov. 16, 2006
Applicants:
Hyeoung-won Seo, Gyeonggi-do, KR;
Woun-suck Yang, Gyeonggi-do, KR;
Du-heon Song, Gyeonggi-do, KR;
Jae-man Yoon, Seoul, KR;
Inventors:
Hyeoung-Won Seo, Gyeonggi-do, KR;
Woun-Suck Yang, Gyeonggi-do, KR;
Du-Heon Song, Gyeonggi-do, KR;
Jae-Man Yoon, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of fabricating a fin field effect transistor (FinFET) are disclosed. Embodiments of the invention provide methods of fabricating FinFETs by optimizing a method for forming the fin so that a short channel effect is prevented and high integration is achieved. Accordingly, the fin which has a difficulty in its formation using the current photolithography-etching technique may be readily formed.