The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Jun. 02, 2006
Fabio Pellizzer, Follina, IT;
Roberto Bez, Milan, IT;
Enrico Varesi, Milan, IT;
Agostino Pirovano, Corbetta, IT;
Pietro Petruzza, Pessano Con Bornago, IT;
Fabio Pellizzer, Follina, IT;
Roberto Bez, Milan, IT;
Enrico Varesi, Milan, IT;
Agostino Pirovano, Corbetta, IT;
Pietro Petruzza, Pessano Con Bornago, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A process for manufacturing phase change memory cells includes the step of forming a heater element in a semiconductor wafer and a storage region of a phase change material on and in contact with the heater element. In order to form the heater element and the phase change storage region a heater structure is first formed and a phase change layer is deposited on and in contact with the heater structure. Then, the phase change layer and the heater structure are defined by subsequent self-aligned etch steps.