The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Apr. 03, 2007
Min-lung Huang, Kaohsiung, TW;
Min-Lung Huang, Kaohsiung, TW;
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Abstract
A method for forming a redistribution layer in a wafer structure, including (a) providing a wafer having a plurality of conductive structures and a first passivation layer thereon, wherein the first passivation layer covers the wafer except the conductive surfaces of the conductive structures; (b) forming a second passivation layer over the first passivation layer; (c) selectively removing part of the second passivation layer to form a plurality of grooves corresponding to a predetermined circuit; (d) forming a redistribution layer in the grooves; and (e) forming a third passivation layer over the second passivation layer and the redistribution layer. As a result, the redistribution layer is 'embedded' in the second passivation layer so as to avoid the delamination of the redistribution layer.